n-c hannel logic level e nhancement mode f ield e ffect t rans is tor to-252 and to-251 package. abs olute maximum r atings (ta=25 c unless otherwise noted) s amhop microelectronics corp. aug 08 , 2005 1 p r oduc t s ummar y v ds s i d r ds (on) ( m ) 30v 30a 18 @ v gs = 10v 25 @ v gs =4.5v features super high dense cell design for low r ds (on ). r ugged and reliable. s g d stu series to-252aa(d-pak) std series to-251(l-pak) g g g g s s s s d d d d thermal characteristics thermal r esistance, junction-to-case thermal r esistance, junction-to-ambient r jc 3 50 r ja /w c /w c 30 parameter symbol limit unit drain-s ource voltage v ds v g a te -s ourc e v olta ge 20 v gs v -p ulsed 30 i d a 75 i dm a drain-s ource diode f orward c urrent 20 i s a maximum p ower dissipation p d w operating and storage temperature r ange t j ,t stg -55 to 175 c @tc=25c 50 drain c urrent-c ontinuous @ t c=25 c a max s tu/d3030nls green product
parameter symbol condition min typ max unit off characteristics drain-s ource breakdown voltage bv ds s = v gs 0v, i d 250ua = 30 v zero g ate voltage drain c urrent i ds s v ds 24v, v gs 0v == 1 gate-body leakage i gss v gs 20v, v ds 0v = = 100 na on char acte r is tics g ate t hreshold voltage v gs(th) v ds v gs ,i d = 250ua = 13 v d ra in-s ourc e o n-s ta te r e s is ta nc e r ds (on) v gs 10v, i d 20a v gs 4.5v, i d 12a on-state drain current i d(on) v ds = 10v, v gs =10v a s f orward trans conductance fs g v ds 10v, i d 20a dynamic characteristics b input capacitance c is s c rss c oss o utput c a pa c ita nc e r everse transfer capacitance v ds =15v, v gs =0v f=1.0mh z p f p f p f s witc hing c har ac te r is tic s b turn-on delay time rise time turn-o ff delay time t d(on) t r t d(off) t f v dd = 15v i d =1a v gs = 10v r gen =6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v, i d = 20a v gs =10v nc nc nc c fall time = = = = == 2 5 ua mohm mohm v ds =15v, i d =20a,v gs =10v nc v ds =15v, i d =20a,v gs =4.5v 50 120 180 830 17 10 35 16 11 5 1.8 9 25 ohm rg gate resistance v gs =0v, v ds = 0v, f=1.0mh z 3 s tu/d3030nls electrical characteristics (t c =25 c unles s otherwis e noted) 1.7 13 18 25 18 a
parameter symbol c ondition min typ max unit e le ctr ical char acte r is tics (t c =25 c unles s otherwis e noted) dr ain-s our ce diode char acte r is tics diode f orward voltage v sd v gs = 0v, is = 10a 1.3 v a notes b.guaranteed by design, not subject to production testing. a.pulse test:pulse width 300us, duty cycle 2%. figure 2. transfer characteristics f igure 4. o n-r es is tance v s j unction temperature i d , drain c urrent (a) v gs , g ate-to-s ource voltage (v ) r ds (on) ( m ) on-resistance i d , drain c urrent (a) 3 r ds (on) , normalized s tu/d3030nls 30 25 20 15 10 5 0 -55 c 25 c 20 15 10 5 0 0 0.7 1.4 2.1 2.8 3.5 4.2 tj=125 c 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -55 -25 0 25 125 0.97 tj( c) 100 50 75 v gs =10v i d =20a t j, j unction t emperature ( c ) figure 1. output characteristics v ds ,drain-to-sourcevoltage(v) i d ,draincurrent(a) 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 v gs =8v v gs =3v v gs =4v v gs =4.5v v gs =10v f igure 3. o n-r es is tance vs . drain c urrent and gate voltage 10 20 30 40 50 0 v gs =10v v gs =4.5v v gs =4.5v i d =12a
s tu/d3030nls f igure 6. b reakdown v oltage v ariation with t emperature vth, normalized g ate-s ource t hres hold v oltage bv ds s , normalized drain-s ource b reakdown v oltage is, s ource-drain current (a) figure 8. body diode forward voltage v ariation with s ource c urrent v sd , b ody diode f orward v oltage (v ) t j, j unction t emperature ( c ) tj, junction temperature ( c) 4 6 20.0 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =250ua v gs , gate-s ource voltage (v) r ds (on) ( m ) 42 35 28 21 14 7 0 f igure 7. o n-r es is tance vs . g ate-s ource v oltage 24 68 10 0 f igure 5. g ate t hreshold v ariation with t emperature 25 c 125 c 70 c 25 c 70 c 125 c i d =20a
s tu/d3030nls 6 figure 12. maximum safe operating area v ds ,drain-sourcevoltage(v) i d ,draincurrent(a) 100 10 0.5 0.1 1 1103060 v gs =10v s ingle p uls e tc=25 c r ds (on) limi t dc 1s 100ms 1 0 ms 1ms 80 v gs ,gatetosourcevoltage(v) figure 10. gate charge qg, total gate charge (nc) 10 8 6 4 2 0 03 6 9 12 15 18 21 24 v ds =15v i d =20a figure 9. capacitance v ds , drain-to s ource voltage (v ) c, capacitance (pf) 0 5 10 15 20 25 30 1200 1000 800 600 400 200 0 ciss coss crss f igure 11.s witching characteris tics rg,gateresistance( ) s witching t ime (ns ) 100 10 1 1 610 60100 60 600 300 200 td(on) td(off) tr tf vds =15v,id=1a vgs =10v 5
f igure 11. s witching t es t c ircuit f igure 12. s witching w aveforms t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% pulse width 6 s tu/d3030nls inve r te d v dd r d v v r s v g gs in gen out l 6 transient thermal impedance square wave pulse duration (sec) f igure 13. normalized t hermal t ransient impedance c urve r( t) , n orma liz e d e ffe c tive 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r / ja (t)=r (t) * r / ja 2. r / ja =s ee datasheet 3. t jm- t a =p dm *r / ja (t) 4. duty cycle, d=t 1 /t 2 single pulse
7 s tu/d3030nls to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
s tu/d3030nls 8 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
to251 tube/to-252 to-252 carrier tape to-252 reel tape and reel data unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2 p0 p1 p2 t 6.80 2 0.1 10.3 2 0.1 2.50 2 0.1 ? 2 ? 1.5 + 0.1 -0 16.0 0.3 2 1.75 0.1 2 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 s 9 "a " to-251 tube s tu/d3030nls
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